A resistive sense memory and method of writing data thereto. In accordance with various embodiments, the resistive sense memory comprises a first reference layer with a fixed magnetic orientation in a selected direction coupled to a first tunneling barrier, a second reference layer with a fixed magnetic orientation in the selected direction coupled to a second tunneling barrier, and a recording structure disposed between the first and second tunneling barriers comprising first and second free layers. A selected logic state is written to the resistive sense memory by applying a programming input to impart complementary first and second programmed magnetic orientations to the respective first and second free layers.