发明申请
US20100258169A1 PULSED PLASMA DEPOSITION FOR FORMING MICROCRYSTALLINE SILICON LAYER FOR SOLAR APPLICATIONS
审中-公开
形成用于太阳能应用的微晶硅层的脉冲等离子体沉积
- 专利标题： PULSED PLASMA DEPOSITION FOR FORMING MICROCRYSTALLINE SILICON LAYER FOR SOLAR APPLICATIONS
- 专利标题（中）： 形成用于太阳能应用的微晶硅层的脉冲等离子体沉积
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申请号： US12422551申请日： 2009-04-13
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公开(公告)号： US20100258169A1公开(公告)日： 2010-10-14
- 发明人: Shuran Sheng , Yong Kee Chae
- 申请人： Shuran Sheng , Yong Kee Chae
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS , INC.
- 当前专利权人： APPLIED MATERIALS , INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/20
摘要：
A method for an intrinsic type microcrystalline silicon layer is provided. In one embodiment, the microcrystalline silicon layer is fabricated by providing a substrate into a processing chamber, supplying a gas mixture into the processing chamber, applying a RF power at a first mode in the gas mixture, pulsing the gas mixture into the processing chamber, and applying the RF power at a second mode in the pulsed gas mixture.
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