发明申请
- 专利标题： INTEGRATED CIRCUIT SYSTEM WITH A FLOATING DIELECTRIC REGION AND METHOD OF MANUFACTURE THEREOF
- 专利标题（中）： 具有浮动介质区域的集成电路系统及其制造方法
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申请号： US12422694申请日： 2009-04-13
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公开(公告)号： US20100258868A1公开(公告)日： 2010-10-14
- 发明人: Chunshan Yin , Lee Wee Teo , Chung Foong Tan , Jae Gon Lee
- 申请人： Chunshan Yin , Lee Wee Teo , Chung Foong Tan , Jae Gon Lee
- 申请人地址： SG Singapore
- 专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A method of manufacture of an integrated circuit system includes: providing a second layer between a first layer and a third layer; forming an active device over the third layer; forming the third layer to form an island region underneath the active device; forming the second layer to form a floating second layer with an undercut beneath the island region; and depositing a fourth layer around the island region and the floating second layer.
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