Invention Application
US20100261001A1 NANOSTRUCTURED THIN-FILM FORMED BY UTILIZING OBLIQUE-ANGLE DEPOSITION AND METHOD OF THE SAME
审中-公开
通过利用角质沉积形成的纳米结构薄膜及其相关方法
- Patent Title: NANOSTRUCTURED THIN-FILM FORMED BY UTILIZING OBLIQUE-ANGLE DEPOSITION AND METHOD OF THE SAME
- Patent Title (中): 通过利用角质沉积形成的纳米结构薄膜及其相关方法
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Application No.: US12822658Application Date: 2010-06-24
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Publication No.: US20100261001A1Publication Date: 2010-10-14
- Inventor: Chia-Hua Chang , Chin-Sheng Yang , Ching-Hua Chiu , Pei-Chen Yu , Hao-Chung Kuo
- Applicant: Chia-Hua Chang , Chin-Sheng Yang , Ching-Hua Chiu , Pei-Chen Yu , Hao-Chung Kuo
- Applicant Address: TW Hsinchu City
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW Hsinchu City
- Priority: TW097131039 20080814
- Main IPC: B32B3/26
- IPC: B32B3/26

Abstract:
The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties.
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