Invention Application
- Patent Title: METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CHEMICAL PHASE DEPOSITION
- Patent Title (中): 通过化学相沉积法形成含金属薄膜的方法
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Application No.: US12670023Application Date: 2008-07-24
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Publication No.: US20100261350A1Publication Date: 2010-10-14
- Inventor: Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
- Applicant: Ravi Kanjolia , Rajesh Odedra , Neil Boag , David Weyburne
- Applicant Address: US MO St. Louis
- Assignee: SIGMA-ALDRICH CO.
- Current Assignee: SIGMA-ALDRICH CO.
- Current Assignee Address: US MO St. Louis
- International Application: PCT/US08/71015 WO 20080724
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C07F15/00
Abstract:
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.
Public/Granted literature
- US08481121B2 Methods of forming thin metal-containing films by chemical phase deposition Public/Granted day:2013-07-09
Information query
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