发明申请
US20100264016A1 VERY LOW PRESSURE HIGH POWER IMPULSE TRIGGERED MAGNETRON SPUTTERING
有权
非常低的压力高功率脉冲触发磁控溅射
- 专利标题: VERY LOW PRESSURE HIGH POWER IMPULSE TRIGGERED MAGNETRON SPUTTERING
- 专利标题(中): 非常低的压力高功率脉冲触发磁控溅射
-
申请号: US12797829申请日: 2010-06-10
-
公开(公告)号: US20100264016A1公开(公告)日: 2010-10-21
- 发明人: Andre Anders , Joakim Andersson
- 申请人: Andre Anders , Joakim Andersson
- 申请人地址: US CA Oakland
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US CA Oakland
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.