Invention Application
US20100264328A1 CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL
有权
连接ICP和ECR等离子体源用于大量离子束生成和控制
- Patent Title: CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL
- Patent Title (中): 连接ICP和ECR等离子体源用于大量离子束生成和控制
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Application No.: US12424964Application Date: 2009-04-16
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Publication No.: US20100264328A1Publication Date: 2010-10-21
- Inventor: Costel Biloiu , Jay Scheuer , Alexander Perel
- Applicant: Costel Biloiu , Jay Scheuer , Alexander Perel
- Main IPC: H01J27/00
- IPC: H01J27/00

Abstract:
An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
Public/Granted literature
- US07999479B2 Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control Public/Granted day:2011-08-16
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