发明申请
- 专利标题： Nonvolatile Memory Devices and Related Methods
- 专利标题（中）： 非易失性存储器件及相关方法
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申请号： US12827549申请日： 2010-06-30
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公开(公告)号： US20100264481A1公开(公告)日： 2010-10-21
- 发明人: Yoo-Cheol Shin , Jung-Dal Choi
- 申请人： Yoo-Cheol Shin , Jung-Dal Choi
- 优先权： KR10-2005-0030458 20050412
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8246
摘要：
Nonvolatile memory devices and methods of fabricating the same are provided. A semiconductor substrate is provided having a cell field region and a high-voltage field region. Device isolation films are provided on the substrate. The device isolation films define active regions of the substrate. A cell gate-insulation film and a cell gate-conductive film are provided on the cell field region of the substrate including the device isolation films. A high-voltage gate-insulation film and a high-voltage gate-conductive film are provided on the high-voltage field region of the substrate including the device isolation films. The device isolation film on the high-voltage field region of the substrate is at least partially recessed to provide a groove therein.
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