发明申请
- 专利标题: Device including contact structure and method of forming the same
- 专利标题(中): 包括接触结构的装置及其形成方法
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申请号: US11655116申请日: 2007-01-19
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公开(公告)号: US20100264544A1公开(公告)日: 2010-10-21
- 发明人: Jang-Eun Heo , Young-Moon Choi , Sun-Woo Lee , Hong-Sik Yoon , Kyung-Rae Byun
- 申请人: Jang-Eun Heo , Young-Moon Choi , Sun-Woo Lee , Hong-Sik Yoon , Kyung-Rae Byun
- 优先权: KR2006-06235 20060120
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/768
摘要:
A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.
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