发明申请
US20100265981A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER
审中-公开
基于氮化物的半导体发光二极管，基于氮化物的半导体激光器件，其制造方法和形成基于氮化物的半导体层的方法
- 专利标题： NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER
- 专利标题（中）： 基于氮化物的半导体发光二极管，基于氮化物的半导体激光器件，其制造方法和形成基于氮化物的半导体层的方法
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申请号： US12809770申请日： 2008-12-12
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公开(公告)号： US20100265981A1公开(公告)日： 2010-10-21
- 发明人: Ryoji Hiroyama , Yasuto Miyake , Yasumitsu Kunoh , Yasuyuki Bessho , Masayuki Hata
- 申请人： Ryoji Hiroyama , Yasuto Miyake , Yasumitsu Kunoh , Yasuyuki Bessho , Masayuki Hata
- 申请人地址： JP Moriguchi-shi, Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi-shi, Osaka
- 优先权： JP2007-331097 20071221; JP2008-004168 20080111; JP2008-006225 20080115
- 国际申请： PCT/JP2008/072618 WO 20081212
- 主分类号： H01S5/323
- IPC分类号： H01S5/323 ; H01L33/30 ; H01L33/00 ; H01L21/20 ; H01L33/10
摘要：
A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode (30) includes a substrate (11) formed with a recess portion (21) on a main surface and a nitride-based semiconductor layer (12) having a light-emitting layer (14) on the main surface and including a first side surface (12a) having a (000-1) plane formed to start from a first inner side surface (21a) of the recess portion and a second side surface (12b) formed at a region opposite to the first side surface with the light-emitting layer therebetween to start from a second inner side surface (21b) of the recess portion on the main surface.
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