Invention Application
US20100266960A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EXPOSURE DEVICE
审中-公开
制造半导体器件和曝光器件的方法
- Patent Title: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EXPOSURE DEVICE
- Patent Title (中): 制造半导体器件和曝光器件的方法
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Application No.: US12721310Application Date: 2010-03-10
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Publication No.: US20100266960A1Publication Date: 2010-10-21
- Inventor: Hiromitsu MASHITA , Toshiya KOTANI , Michiya TAKIMOTO , Hidefumi MUKAI , Takafumi TAGUCHI , Kazuya FUKUHARA
- Applicant: Hiromitsu MASHITA , Toshiya KOTANI , Michiya TAKIMOTO , Hidefumi MUKAI , Takafumi TAGUCHI , Kazuya FUKUHARA
- Priority: JP2009-100545 20090417
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03B27/42
Abstract:
A method of manufacturing a semiconductor device according to an embodiment includes determining a second exposure parameter including exposure parameters except for an exposure amount from a dimension distribution information so that a resist pattern of a first resist pattern formed based on a second pattern has a desired dimension in a plurality of regions to be shot within a surface of a wafer.
Information query
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