发明申请
- 专利标题： DOUBLE SELF-ALIGNED METAL OXIDE TFT
- 专利标题（中）： 双重自对准金属氧化物TFT
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申请号： US12427200申请日： 2009-04-21
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公开(公告)号： US20100267197A1公开(公告)日： 2010-10-21
- 发明人: Chan-Long Shieh , Gang Yu
- 申请人： Chan-Long Shieh , Gang Yu
- 主分类号： H01L21/36
- IPC分类号： H01L21/36
摘要：
A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.
公开/授权文献
- US07977151B2 Double self-aligned metal oxide TFT 公开/授权日：2011-07-12
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