发明申请
- 专利标题: METHOD OF FABRICATING STACKED SEMICONDUCTOR STRUCTURE
- 专利标题(中): 制作堆叠半导体结构的方法
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申请号: US12829704申请日: 2010-07-02
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公开(公告)号: US20100267202A1公开(公告)日: 2010-10-21
- 发明人: Chien-Ping Huang , Chih-Ming Huang , Han-Ping Pu , Yu-Po Wang , Cheng-Hsu Hsiao
- 申请人: Chien-Ping Huang , Chih-Ming Huang , Han-Ping Pu , Yu-Po Wang , Cheng-Hsu Hsiao
- 申请人地址: TW Taichung
- 专利权人: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- 当前专利权人: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- 当前专利权人地址: TW Taichung
- 优先权: TW095103695 20060203
- 主分类号: H01L21/50
- IPC分类号: H01L21/50
摘要:
A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.
公开/授权文献
- US08183092B2 Method of fabricating stacked semiconductor structure 公开/授权日:2012-05-22