发明申请
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
-
申请号: US12715727申请日: 2010-03-02
-
公开(公告)号: US20100267233A1公开(公告)日: 2010-10-21
- 发明人: Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
- 申请人: Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
- 优先权: JP2009-100850 20090417
- 主分类号: H01L21/321
- IPC分类号: H01L21/321
摘要:
A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried.
公开/授权文献
- US08097538B2 Method of manufacturing semiconductor device 公开/授权日:2012-01-17