发明申请
- 专利标题： Non-Planar Transistors and Methods of Fabrication Thereof
- 专利标题（中）： 非平面晶体管及其制造方法
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申请号： US12652947申请日： 2010-01-06
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公开(公告)号： US20100276761A1公开(公告)日： 2010-11-04
- 发明人: Chih-Hang Tung , Chin-Hsiang Lin , Cheng-Hung Chang , Sey-Ping Sun
- 申请人： Chih-Hang Tung , Chin-Hsiang Lin , Cheng-Hung Chang , Sey-Ping Sun
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
Non-planar transistors and methods of fabrication thereof are described. In an embodiment, a method of forming a non-planar transistor includes forming a channel region on a first portion of a semiconductor fin, the semiconductor fin having a top surface and sidewalls. A gate electrode is formed over the channel region of the semiconductor fin, and an in-situ doped semiconductor layer is grown on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process. At least a part of the doped semiconductor layer is converted to form a dopant rich region.
公开/授权文献
- US09054194B2 Non-planar transistors and methods of fabrication thereof 公开/授权日：2015-06-09
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