发明申请
- 专利标题： SEMICONDUCTOR LIGHT RECEIVING ELEMENT
- 专利标题（中）： 半导体接收元件
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申请号： US12810089申请日： 2008-12-25
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公开(公告)号： US20100276775A1公开(公告)日： 2010-11-04
- 发明人: Emiko Fujii
- 申请人： Emiko Fujii
- 优先权： JP2007334669 20071226
- 国际申请： PCT/JP2008/003949 WO 20081225
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; H01L31/0352
摘要：
The semiconductor light receiving element 1 includes a semiconductor substrate 101, and a semiconductor layer having a photo-absorption layer 105 disposed on the top of the semiconductor substrate 101. The semiconductor layer of the semiconductor light receiving element 1 containing at least the photo-absorption layer 105 has a mesa structure, and a side wall of the mesa is provided with a protective film 113 covering the side wall. The protective film 113 is a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective film 113 located at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective film 113 located at the side that is opposite to the side of the mesa side wall.
公开/授权文献
- US08212286B2 Semiconductor light receiving element 公开/授权日：2012-07-03
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