发明申请
- 专利标题： Wafer Through Silicon Via Forming Method And Equipment Therefor
- 专利标题（中）： 通过硅片通过成型方法和设备来晶圆
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申请号： US12512813申请日： 2009-07-30
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公开(公告)号： US20100279511A1公开(公告)日： 2010-11-04
- 发明人: Jung Hwan CHUN , Gyu Han KIM
- 申请人： Jung Hwan CHUN , Gyu Han KIM
- 优先权： KR10-2009-0038958 20090504
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/306 ; H01L21/465 ; C23F1/08
摘要：
Provided are a wafer through silicon via (TSV) forming method and equipment therefor. The wafer TSV forming method includes the operations of arranging a wafer having a front surface having a circuit area patterned thereon; recognizing locations of bond pads in the circuit area of the front surface of the wafer by using an image recognition camera, and converting the recognition of the locations into bond pad location information with respect to a back surface of the wafer; flipping the wafer; forming etching holes with middle depth in the back surface of the wafer by using a laser in a manner to match the locations of the bond pads by using the bond pad location information from the image recognition camera; and performing a plasma isotropic etching on the back surface having formed therein the etching holes with middle depth, thereby forming TSVs penetrating the bond pads.
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