发明申请
- 专利标题: MULTILAYER DIELECTRIC
- 专利标题(中): 多层电介质
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申请号: US12833354申请日: 2010-07-09
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公开(公告)号: US20100279514A1公开(公告)日: 2010-11-04
- 发明人: Gregory S. Herman , Peter Mardilovich , Randy L. Hoffman , Laura Lynn Kramer , Kurt M. Ulmer
- 申请人: Gregory S. Herman , Peter Mardilovich , Randy L. Hoffman , Laura Lynn Kramer , Kurt M. Ulmer
- 专利权人: Hewlett-Packard Development Company LP
- 当前专利权人: Hewlett-Packard Development Company LP
- 主分类号: H01L21/31
- IPC分类号: H01L21/31
摘要:
A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.
公开/授权文献
- US08143128B2 Multilayer dielectric defect method 公开/授权日:2012-03-27
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