Devices With Graphene Layers

Invention Application

US20100285639A1 Devices With Graphene Layers 有权

Title translation: 设备与石墨烯层

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Patent Title: Devices With Graphene Layers
Patent Title (中): 设备与石墨烯层
Application No.: US12838683

Application Date: 2010-07-19
Publication No.: US20100285639A1

Publication Date: 2010-11-11
Inventor: Jorge Manuel Garcia , Loren N. Pfeiffer
Applicant: Jorge Manuel Garcia , Loren N. Pfeiffer
Main IPC: H01L21/335
IPC: H01L21/335

Abstract:

A method includes an act of providing a crystalline substrate with a diamond-type lattice and an exposed substantially (111)-surface. The method also includes an act of forming a graphene layer or a graphene-like layer on the exposed substantially (111)-surface.

Abstract(Chinese):

一种方法包括提供具有金刚石型晶格和暴露的基本上（111）表面的晶体衬底的动作。该方法还包括在暴露的基本上（111）表面上形成石墨烯层或石墨烯层的动作。

Public/Granted literature

US08163634B2 Devices with graphene layers Public/Granted day:2012-04-24

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管