发明申请
- 专利标题: METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES INCLUDING AIR SPACERS SEPARATING CONDUCTIVE STRUCTURES AND CONTACT PLUGS
- 专利标题(中): 制造集成电路装置的方法,包括分隔导电结构和接触片的空气间隔
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申请号: US12777561申请日: 2010-05-11
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公开(公告)号: US20100285662A1公开(公告)日: 2010-11-11
- 发明人: Dae-Ik Kim , Je-Min Park , Chang-Suk Hyun
- 申请人: Dae-Ik Kim , Je-Min Park , Chang-Suk Hyun
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2009-0040800 20090511
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
An integrated circuit device includes first and second conductive structures spaced apart from one another on a substrate along a first direction. The first and second conductive structures extend in a second direction substantially perpendicular to the first direction. A contact plug is interposed between the first and second conductive structures and is separated therefrom along the first direction by respective air gaps on opposite sides of the contact plug. The air gaps define first and second air spacers that electrically insulate the contact plug from the first and second conductive structures, respectively. An upper insulation layer covers the first and second air spacers and the first and second conductive structures. The air spacers may sufficiently reduce the loading capacitance between the conductive structures. Related fabrication methods are also discussed.
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