A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas.