发明申请
- 专利标题： Residual Layer Thickness Measurement and Correction
- 专利标题（中）： 残留层厚度测量和校正
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申请号： US12835009申请日： 2010-07-13
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公开(公告)号： US20100286811A1公开(公告)日： 2010-11-11
- 发明人: Christopher E. Jones , Niyaz Khusnatdinov , Stephen C. Johnson , Philip D. Schumaker , Pankaj B. Lad
- 申请人： Christopher E. Jones , Niyaz Khusnatdinov , Stephen C. Johnson , Philip D. Schumaker , Pankaj B. Lad
- 申请人地址： US TX Austin
- 专利权人： MOLECULAR IMPRINTS, INC.
- 当前专利权人： MOLECULAR IMPRINTS, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： G06F17/00
- IPC分类号： G06F17/00
摘要：
In nano-imprint lithography it is important to detect thickness non-uniformity of a residual layer formed on a substrate. Such non-uniformity is compensated such that a uniform residual layer may be formed. Compensation is performed by calculating a corrected fluid drop pattern.
公开/授权文献
- US08647554B2 Residual layer thickness measurement and correction 公开/授权日：2014-02-11
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