发明申请
- 专利标题： PLASMA PROCESSING APPARATUS
- 专利标题（中）： 等离子体加工设备
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申请号： US12814979申请日： 2010-06-14
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公开(公告)号： US20100294656A1公开(公告)日： 2010-11-25
- 发明人: Masayoshi IKEDA , Yo Tanaka , Tsutomu Hiroishi
- 申请人： Masayoshi IKEDA , Yo Tanaka , Tsutomu Hiroishi
- 申请人地址： JP Kawasaki-shi
- 专利权人： CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA CORPORATION
- 当前专利权人地址： JP Kawasaki-shi
- 主分类号： C23C14/34
- IPC分类号： C23C14/34
摘要：
A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.
公开/授权文献
- US08778151B2 Plasma processing apparatus 公开/授权日：2014-07-15
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