发明申请
US20100295100A1 INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR
有权
具有大容量波形器件和晶体管的集成电路
- 专利标题： INTEGRATED CIRCUIT HAVING A BULK ACOUSTIC WAVE DEVICE AND A TRANSISTOR
- 专利标题（中）： 具有大容量波形器件和晶体管的集成电路
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申请号： US12469326申请日： 2009-05-20
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公开(公告)号： US20100295100A1公开(公告)日： 2010-11-25
- 发明人: JENN HWA HUANG , Bruce M. Green
- 申请人： JENN HWA HUANG , Bruce M. Green
- 主分类号： H01L29/808
- IPC分类号： H01L29/808 ; H01L21/337
摘要：
A bulk GaN layer is on a first surface of a substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region. A source/drain layer is over a first surface of the bulk GaN layer in the GaN transistor region. A gate electrode is formed over the source/drain layer. A first BAW electrode is formed over the first surface of the bulk GaN layer in the BAW device region. An opening is formed in a second surface of the substrate, opposite the first surface of the substrate, which extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer. A second BAW electrode is formed within the opening over the second surface of the bulk GaN layer.
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