发明申请
US20100295125A1 Split gate oxides for a laterally diffused metal oxide semiconductor (LDMOS)
有权
用于横向扩散的金属氧化物半导体（LDMOS）的分离栅极氧化物
- 专利标题： Split gate oxides for a laterally diffused metal oxide semiconductor (LDMOS)
- 专利标题（中）： 用于横向扩散的金属氧化物半导体（LDMOS）的分离栅极氧化物
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申请号： US12457745申请日： 2009-06-19
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公开(公告)号： US20100295125A1公开(公告)日： 2010-11-25
- 发明人: Akira Ito
- 申请人： Akira Ito
- 申请人地址： US CA Irvine
- 专利权人： Broadcom Corporation
- 当前专利权人： Broadcom Corporation
- 当前专利权人地址： US CA Irvine
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes a first heavily doped region to represent a source region. A second heavily doped region represents a drain region of the semiconductor device. A third heavily doped region represents a gate region of the semiconductor device. The semiconductor device includes a gate oxide positioned between the source region and the drain region, below the gate region. The semiconductor device uses a split gate oxide architecture to form the gate oxide. The gate oxide includes a first gate oxide having a first thickness and a second gate oxide having a second thickness.
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