发明申请
- 专利标题: POWER SEMICONDUCTOR MODULE
- 专利标题(中): 功率半导体模块
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申请号: US12538042申请日: 2009-08-07
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公开(公告)号: US20100295172A1公开(公告)日: 2010-11-25
- 发明人: Shan Gao , Seog Moon Choi , Do Jae Yoo , Tae Hyun Kim , Bum Sik Jang , Ji Hyun Park
- 申请人: Shan Gao , Seog Moon Choi , Do Jae Yoo , Tae Hyun Kim , Bum Sik Jang , Ji Hyun Park
- 优先权: KR10-2009-0045332 20090525
- 主分类号: H01L23/34
- IPC分类号: H01L23/34
摘要:
Disclosed is a power semiconductor module having improved heat dissipation performance, including an anodized metal substrate including a metal plate, an anodized layer formed on a surface of the metal plate, and a circuit layer formed on the anodized layer on the metal plate, a power device connected to the circuit layer, and a housing mounted on the metal plate and for defining a sealing space which accommodates a resin sealing material for sealing the circuit layer and the power device.
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