发明申请
US20100295560A1 Scanning Impedance Microscopy (SIM) To Map Local Impedance In A Dielectric Film 审中-公开
扫描阻抗显微镜(SIM)映射局部阻抗在介质膜

  • 专利标题: Scanning Impedance Microscopy (SIM) To Map Local Impedance In A Dielectric Film
  • 专利标题(中): 扫描阻抗显微镜(SIM)映射局部阻抗在介质膜
  • 申请号: US12242730
    申请日: 2008-09-30
  • 公开(公告)号: US20100295560A1
    公开(公告)日: 2010-11-25
  • 发明人: Quan Tran
  • 申请人: Quan Tran
  • 主分类号: G01R27/26
  • IPC分类号: G01R27/26 G01R27/08
Scanning Impedance Microscopy (SIM) To Map Local Impedance In A Dielectric Film
摘要:
A scanning impedance microscopy device maps out local impedance in a dielectric film sample. This may be used to detect conductive filaments in a dielectric film, to characterize semiconductor interfaces, and to be used a reading scheme for resistive change memory such as RRAM.
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