发明申请
- 专利标题： Plasma Processing Method
- 专利标题（中）： 等离子体处理方法
-
申请号： US12849233申请日： 2010-08-03
-
公开(公告)号： US20100297783A1公开(公告)日： 2010-11-25
- 发明人: Shoji IKUHARA , Daisuke Shiraishi , Hideyuki Yamamoto , Akira Kagoshima , Hiromichi Enami , Yosuke Karashima , Eiji Matsumoto
- 申请人： Shoji IKUHARA , Daisuke Shiraishi , Hideyuki Yamamoto , Akira Kagoshima , Hiromichi Enami , Yosuke Karashima , Eiji Matsumoto
- 优先权： JP2005-144043 20050517
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method for performing a plasma process using a plasma processing apparatus which includes a vacuum process chamber, an exhaust device, a mass flow controller supplying a process gas, a stage electrode which receives and holds a workpiece by adsorption, a transfer device, and a high-frequency electrical source. The method includes a first step of performing the plasma process for the workpiece in the vacuum process chamber by a corresponding recipe of predetermined recipes, a second step of acquiring apparatus parameters showing the condition of the plasma processing apparatus when a specific recipe of the predetermined recipes is executed to diagnose whether the condition of the plasma processing apparatus is good or not based on the acquired apparatus parameters.