发明申请
US20100301458A1 Alignment Target Contrast in a Lithographic Double Patterning Process
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光刻双重图案化过程中的对准目标对比度
- 专利标题： Alignment Target Contrast in a Lithographic Double Patterning Process
- 专利标题（中）： 光刻双重图案化过程中的对准目标对比度
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申请号： US12725026申请日： 2010-03-16
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公开(公告)号： US20100301458A1公开(公告)日： 2010-12-02
- 发明人: Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
- 申请人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
- 申请人地址： NL Veldhoven NL Veldhoven
- 专利权人： ASML Holding N.V.,ASML Netherlands B.V.
- 当前专利权人： ASML Holding N.V.,ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven NL Veldhoven
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/027 ; G03B27/42
摘要：
A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The day may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
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