发明申请
US20100304564A1 SELECTIVE LOCAL INTERCONNECT TO GATE IN A SELF ALIGNED LOCAL INTERCONNECT PROCESS
有权
选择性本地连接在自对准的本地连接过程中进行
- 专利标题： SELECTIVE LOCAL INTERCONNECT TO GATE IN A SELF ALIGNED LOCAL INTERCONNECT PROCESS
- 专利标题（中）： 选择性本地连接在自对准的本地连接过程中进行
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申请号： US12475796申请日： 2009-06-01
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公开(公告)号： US20100304564A1公开(公告)日： 2010-12-02
- 发明人: Richard T. Schultz
- 申请人： Richard T. Schultz
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
A semiconductor device fabrication process includes forming a gate of a transistor on a semiconductor substrate using a hard mask. The hard mask is selectively removed in one or more selected regions over the gate. The removal of the hard mask in the selected regions allows the gate to be connected to an upper metal layer through at least one insulating layer located substantially over the transistor. Conductive material is deposited in one or more trenches formed through the at least one insulating layer. The conductive material forms a local interconnect to the gate in at least one of the selected regions.
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