发明申请
- 专利标题: Single-Junction Photovoltaic Cell
- 专利标题(中): 单相光伏电池
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申请号: US12713572申请日: 2010-02-26
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公开(公告)号: US20100307591A1公开(公告)日: 2010-12-09
- 发明人: Stephen W. Bedell , Norma E. Sosa Cortes , Keith E. Fogel , Devendra Sadana , Davood Shahrjerdi , Brent A. Wacaser
- 申请人: Stephen W. Bedell , Norma E. Sosa Cortes , Keith E. Fogel , Devendra Sadana , Davood Shahrjerdi , Brent A. Wacaser
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L31/0304
- IPC分类号: H01L31/0304 ; H01L31/18
摘要:
A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer.
公开/授权文献
- US08633097B2 Single-junction photovoltaic cell 公开/授权日:2014-01-21
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