发明申请
US20100308337A1 Schottky Diodes Including Polysilicon Having Low Barrier Heights and Methods of Fabricating the Same
有权
包括具有低阻挡高度的多晶硅的肖特基二极管及其制造方法
- 专利标题： Schottky Diodes Including Polysilicon Having Low Barrier Heights and Methods of Fabricating the Same
- 专利标题（中）： 包括具有低阻挡高度的多晶硅的肖特基二极管及其制造方法
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申请号： US12477376申请日： 2009-06-03
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公开(公告)号： US20100308337A1公开(公告)日： 2010-12-09
- 发明人: Saptharishi Sriram , Qingchun Zhang
- 申请人： Saptharishi Sriram , Qingchun Zhang
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/20 ; H01L29/24 ; H01L21/329
摘要：
Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein.
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