An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has perpendicular magnetic anisotropy, and the first magnetization fixed layer and the second magnetization free layer has in-plane magnetic anisotropy. The first magnetization free layer has: first and second magnetization fixed regions whose magnetization directions are fixed; and a magnetization free region whose magnetization direction is reversible and connected to the first and second magnetization fixed regions. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced in a first direction from center of the magnetization free region. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer. The second magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.