发明申请
- 专利标题： Spalling for a Semiconductor Substrate
- 专利标题（中）： 剥落半导体基板
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申请号： US12713560申请日： 2010-02-26
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公开(公告)号： US20100310775A1公开(公告)日： 2010-12-09
- 发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra Sadana , Davood Shahrjerdi
- 申请人： Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra Sadana , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： B05D3/02
- IPC分类号： B05D3/02
摘要：
A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.