发明申请
US20100312954A1 Multi-Chip Semiconductor Devices Having Non-Volatile Memory Devices Therein
有权
具有非易失性存储器件的多芯片半导体器件
- 专利标题： Multi-Chip Semiconductor Devices Having Non-Volatile Memory Devices Therein
- 专利标题（中）： 具有非易失性存储器件的多芯片半导体器件
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申请号： US12844621申请日： 2010-07-27
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公开(公告)号： US20100312954A1公开(公告)日： 2010-12-09
- 发明人: Byung-Gil Jeon , Kang-Woon Lee , Byung-Jun Min , Han-Joo Lee
- 申请人： Byung-Gil Jeon , Kang-Woon Lee , Byung-Jun Min , Han-Joo Lee
- 优先权： KR10-2007-0041415 20070427
- 主分类号： G06F12/02
- IPC分类号： G06F12/02 ; H01L23/52 ; G06F12/00
摘要：
A flash memory device and a flash memory system are disclosed. The flash memory device includes a first non-volatile memory including a plurality of page data cells, storing page data, and reading and outputting the stored page data when a read command is applied from an external portion; and a second non-volatile memory including a plurality of spare data cells respectively adjacent to the plurality of page data cells, storing spare data, scanning the spare data and temporarily storing corresponding information when a file system is mounted, reading and outputting the stored spare data when the read command is applied.
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