发明申请
- 专利标题: NITRIDE SEMICONDUCTOR LASER CHIP
- 专利标题(中): 硝酸盐半导体激光芯片
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申请号: US12785523申请日: 2010-05-24
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公开(公告)号: US20100316082A1公开(公告)日: 2010-12-16
- 发明人: Yoshinobu Kawaguchi , Takeshi Kamikawa
- 申请人: Yoshinobu Kawaguchi , Takeshi Kamikawa
- 优先权: JP2009-140083 20090611
- 主分类号: H01S5/323
- IPC分类号: H01S5/323
摘要:
A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.
公开/授权文献
- US08571083B2 Nitride semiconductor laser chip 公开/授权日:2013-10-29
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