发明申请
- 专利标题： NON-SNAPBACK SCR FOR ELECTROSTATIC DISCHARGE PROTECTION
- 专利标题（中）： 用于静电放电保护的非反射式SCR
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申请号： US12487031申请日： 2009-06-18
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公开(公告)号： US20100320501A1公开(公告)日： 2010-12-23
- 发明人: Amaury Gendron , Chai Ean Gill , Rouying Zhan
- 申请人： Amaury Gendron , Chai Ean Gill , Rouying Zhan
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/33
摘要：
An electrostatic discharge (ESD) protection device (11, 60, 80) coupled across input-output (I/O) (22) and common (23) terminals of a core circuit (24), comprises, first (70, 90) and second (72, 92) merged bipolar transistors (70, 90; 72, 92). A base (62, 82) of the first (70, 90) transistor serves as collector of the second transistor (72, 92) and the base of the second transistor (72, 92) serves as collector of the first (70, 90) transistor, the bases (62, 82) having, respectively, first width (74, 94) and second width (76, 96). A first resistance (78, 98) is coupled between an emitter (67, 87) and base (62, 82) of the first transistor (70, 90) and a second resistance (79, 99) is coupled between an emitter (68, 88) and base (64, 42) of the second transistor (92, 92). ESD trigger voltage Vt1 and holding voltage Vh can be independently optimized by choosing appropriate base widths (74, 94; 76, 96) and resistances (78, 98; 79, 99). By increasing Vh to approximately equal Vt1, the ESD protection is more robust, especially for applications with narrow design windows, for example, with operating voltage close to the degradation voltage).
公开/授权文献
- US08193560B2 Voltage limiting devices 公开/授权日：2012-06-05
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