发明申请
- 专利标题: Electrostatic Discharge Structures and Methods of Manufacture
- 专利标题(中): 静电放电结构及制造方法
-
申请号: US12489774申请日: 2009-06-23
-
公开(公告)号: US20100321842A1公开(公告)日: 2010-12-23
- 发明人: Ephrem G. GEBRESELASIE , Steven H. VOLDMAN
- 申请人: Ephrem G. GEBRESELASIE , Steven H. VOLDMAN
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H02H9/00
- IPC分类号: H02H9/00 ; H01L21/3205
摘要:
Electrostatic discharge (ESD) structures having a connection to a through wafer via structure and methods of manufacture are provided. The structure includes an electrostatic discharge (ESD) network electrically connected in series to a through wafer via. More specifically, the ESD circuit includes a bond pad and an ESD network located under the bond pad. The ESD circuit further includes a through wafer via structure electrically connected in series directly to the ESD network, and which is also electrically connected to VSS.
公开/授权文献
信息查询