发明申请
- 专利标题： GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： III族氮化物半导体外延衬底及其制造方法
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申请号： US12866147申请日： 2009-01-28
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公开(公告)号： US20100327228A1公开(公告)日： 2010-12-30
- 发明人: Akira Bando , Hiroshi Amano
- 申请人： Akira Bando , Hiroshi Amano
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Showa Denko K.K.
- 当前专利权人： Showa Denko K.K.
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2008-029456 20080808
- 国际申请： PCT/JP2009/051347 WO 20090128
- 主分类号： C09K11/64
- IPC分类号： C09K11/64 ; H01L21/20
摘要：
There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of AlxGa1-xN (0≦x≦1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).
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