发明申请
- 专利标题: Sintered Silicon Wafer
- 专利标题(中): 烧结硅片
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申请号: US12668239申请日: 2008-07-04
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公开(公告)号: US20100330325A1公开(公告)日: 2010-12-30
- 发明人: Ryo Suzuki , Hiroshi Takamura
- 申请人: Ryo Suzuki , Hiroshi Takamura
- 申请人地址: JP Tokyo
- 专利权人: NIPPON MINING & METALS CO., LTD.
- 当前专利权人: NIPPON MINING & METALS CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-184756 20070713
- 国际申请: PCT/JP2008/062172 WO 20080704
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; C04B35/00
摘要:
Provided is a sintered silicon wafer in which the maximum crystal grain size is 20μm or less and the average crystal grain size is 1μm or more but not more than 10μm; specifically, provides is a sintered silicon wafer having the following mechanical properties measured by collecting a plurality of test samples from the sintered silicon wafer having a diameter of 400mm or more, namely, the average deflecting strength based on a three-point bending test of 20kgf/mm2 or more but not more than 50kgf/mm2, the average tensile strength of 5kgf/mm2 or more but not more than 20kgf/mm2, and the average Vickers hardness of Hv 800 or more but not more than Hv 1200. The provided sintered silicon wafer is a sintered compact wafer having a fixed strength and mechanical properties similar to those of single-crystal silicon even when it is a sintered silicon wafer of large-size disk shape.
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