发明申请
- 专利标题： INTEGRATED TRANSISTOR, PARTICULARLY FOR VOLTAGES AND METHOD FOR THE PRODUCTION THEREOF
- 专利标题（中）： 集成晶体管，特别适用于电压及其生产方法
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申请号： US12878377申请日： 2010-09-09
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公开(公告)号： US20100330765A1公开(公告)日： 2010-12-30
- 发明人: Karlheinz Muller , Klaus Roschlau
- 申请人： Karlheinz Muller , Klaus Roschlau
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 优先权： DE102004002181.3 20040115
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.
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