发明申请
US20110001202A1 FORMING INDUCTOR AND TRANSFORMER STRUCTURES WITH MAGNETIC MATERIALS USING DAMASCENE PROCESSING FOR INTEGRATED CIRCUITS
有权
使用大容量加工的集成电路形成电感器和具有磁性材料的变压器结构
- 专利标题： FORMING INDUCTOR AND TRANSFORMER STRUCTURES WITH MAGNETIC MATERIALS USING DAMASCENE PROCESSING FOR INTEGRATED CIRCUITS
- 专利标题（中）： 使用大容量加工的集成电路形成电感器和具有磁性材料的变压器结构
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申请号： US12882529申请日： 2010-09-15
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公开(公告)号： US20110001202A1公开(公告)日： 2011-01-06
- 发明人: Donald S. Gardner , Gerhard Schrom , Peter Hazucha , Fabrice Paillet , Tanay Karnik
- 申请人： Donald S. Gardner , Gerhard Schrom , Peter Hazucha , Fabrice Paillet , Tanay Karnik
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.
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