发明申请
US20110001978A1 Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method
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检验方法和装置,平版印刷设备,平版印刷加工单元和器件制造方法
- 专利标题: Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method
- 专利标题(中): 检验方法和装置,平版印刷设备,平版印刷加工单元和器件制造方法
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申请号: US12822422申请日: 2010-06-24
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公开(公告)号: US20110001978A1公开(公告)日: 2011-01-06
- 发明人: Hendrik Jan Hidde SMILDE , Willem Marie Julia Marcel Coene
- 申请人: Hendrik Jan Hidde SMILDE , Willem Marie Julia Marcel Coene
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 主分类号: G01N21/47
- IPC分类号: G01N21/47
摘要:
A method of determining an overlay error between two successive layers produced by a lithographic process on a substrate, including using the lithographic process to form a calibration structure including a periodic structure of the same pitch on each of the layers, such that an overlaid pair of periodic structures is formed, the structures being parallel, but offset relative to each other by an overlay amount. A spectrum produced by directing a beam of radiation onto the calibration structure is measured and compared with one or more modeled spectra so as to determine values of the grating parameters for the calibration structure from the measured spectrum. The lithographic process is used to form further overlaid periodic structures on the same or one or more subsequent substrates, the determined grating parameter values for the calibration structure being used to determine overlay amounts for the further overlaid periodic structures.
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