发明申请
- 专利标题： LATERAL PHASE CHANGE MEMORY
- 专利标题（中）： 侧向相位变化记忆
-
申请号： US12883086申请日： 2010-09-15
-
公开(公告)号： US20110003454A1公开(公告)日： 2011-01-06
- 发明人: Richard Dodge , Guy Wicker
- 申请人： Richard Dodge , Guy Wicker
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 优先权： EP05102814.0 20050408
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by the second electrode. As a result, the spacing between the electrodes may be very precisely controlled and limited to very small dimensions. The electrodes are advantageously formed of the same material, prior to formation of the phase change material region.
公开/授权文献
- US08211742B2 Lateral phase change memory 公开/授权日：2012-07-03
信息查询
IPC分类:
