发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12883701申请日： 2010-09-16
-
公开(公告)号： US20110003475A1公开(公告)日： 2011-01-06
- 发明人: Michie Sunayama , Yoshiyuki Nakao , Noriyoshi Shimizu
- 申请人： Michie Sunayama , Yoshiyuki Nakao , Noriyoshi Shimizu
- 申请人地址： JP Yokohama-shi
- 专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Yokohama-shi
- 优先权： JP2008-030314 20080212
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method for producing a semiconductor device including a first conductor disposed on a semiconductor substrate; an oxygen-containing insulation film disposed on the semiconductor substrate and on the first conductor, the insulation film having a contact hole which extends to the first conductor and a trench which is connected to an upper portion of the contact hole; a zirconium oxide film disposed on a side surface of the contact hole and a side surface and a bottom surface of the trench; a zirconium film disposed on the zirconium oxide film inside the contact hole and inside the trench; and a second conductor composed of Cu embedded into the contact hole and into the trench.
公开/授权文献
- US08497208B2 Semiconductor device and method for manufacturing the same 公开/授权日：2013-07-30
信息查询
IPC分类:
