发明申请
- 专利标题: MEMS sensor, silicon microphone, and pressure sensor
- 专利标题(中): MEMS传感器,硅麦克风和压力传感器
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申请号: US12801971申请日: 2010-07-06
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公开(公告)号: US20110006382A1公开(公告)日: 2011-01-13
- 发明人: Goro Nakatani
- 申请人: Goro Nakatani
- 申请人地址: JP Kyoto
- 专利权人: ROHM CO., LTD.
- 当前专利权人: ROHM CO., LTD.
- 当前专利权人地址: JP Kyoto
- 优先权: JP2009-161038 20090707; JP2009-161039 20090707; JP2010-120392 20100526
- 主分类号: H01L29/84
- IPC分类号: H01L29/84
摘要:
An MEMS sensor includes: a semiconductor substrate having an opening extending therethrough; a vibration diaphragm opposed to the opening in an opposing direction and capable of vibrating in the opposing direction; and a piezoelectric element or a strain gage provided in association with the vibration diaphragm.