- 专利标题： MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS
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申请号： US12502209申请日： 2009-07-13
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公开(公告)号： US20110006385A1公开(公告)日： 2011-01-13
- 发明人: Yuankai Zheng , Zheng Gao , Wenzhong Zhu , Wonjoon Jung , Haiwen Xi
- 申请人： Yuankai Zheng , Zheng Gao , Wenzhong Zhu , Wonjoon Jung , Haiwen Xi
- 申请人地址： US CA Scotts Valley
- 专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人： SEAGATE TECHNOLOGY LLC
- 当前专利权人地址： US CA Scotts Valley
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer having a second reference magnetization orientation direction that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.
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