发明申请
- 专利标题： OPENING STRUCTURE
- 专利标题（中）： 开放式结构
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申请号： US12884198申请日： 2010-09-17
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公开(公告)号： US20110006437A1公开(公告)日： 2011-01-13
- 发明人: Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
- 申请人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An opening structure includes a semiconductor substrate, at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall, a dielectric thin film covering at least a portion of the sidewall of each of the openings, and a metal layer filled in the openings.
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