Invention Application
US20110008924A1 METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
有权
在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
- Patent Title: METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
- Patent Title (中): 在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
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Application No.: US12885882Application Date: 2010-09-20
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Publication No.: US20110008924A1Publication Date: 2011-01-13
- Inventor: Jong In YANG , Yu Seung KIM , Sang Yeob SONG , Si Hyuk LEE , Tae Hyung KIM
- Applicant: Jong In YANG , Yu Seung KIM , Sang Yeob SONG , Si Hyuk LEE , Tae Hyung KIM
- Applicant Address: KR Gyunggi-Do
- Assignee: SAMSUNG LED CO., LTD.
- Current Assignee: SAMSUNG LED CO., LTD.
- Current Assignee Address: KR Gyunggi-Do
- Priority: KR10-2008-0101586 20081016
- Main IPC: H01L33/30
- IPC: H01L33/30
Abstract:
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
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