发明申请
- 专利标题: METHOD FOR A BIN RATIO FORECAST AT NEW TAPE OUT STAGE
- 专利标题(中): 新带前端的比率预测方法
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申请号: US12499345申请日: 2009-07-08
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公开(公告)号: US20110010215A1公开(公告)日: 2011-01-13
- 发明人: Chun-Hsien Lin , Andy Tsen , Jui-Long Chen , Sunny Wu , Jong-I Mou , Chia-Hung Huang
- 申请人: Chun-Hsien Lin , Andy Tsen , Jui-Long Chen , Sunny Wu , Jong-I Mou , Chia-Hung Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G06Q10/00
- IPC分类号: G06Q10/00 ; G06F17/18
摘要:
A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.
公开/授权文献
- US08082055B2 Method for a bin ratio forecast at new tape out stage 公开/授权日:2011-12-20
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